| 摘要 |
PROBLEM TO BE SOLVED: To achieve even film formation by eliminating the variation of wafer characteristics, which are due to an inter-wafer distance not matching with the distance between each of wafers and the wall surface of a reaction tube. SOLUTION: A substrate treatment device for treating, in a reaction chamber, a substrate having a first plane and a second plane which are parallel to each other, has an arrangement in which; first and second partition plates are disposed so as to be parallel to the first and the second planes, respectively, and to sandwich the substrate therebetween; and the distance between the first plane side first partition plate and the first plane is made equal to the distance between the second plane side second partition plate and the second plane. Since this arrangement provides the same treatment conditions to the individual wafers, the individual wafers are subjected to the treatment of the same characteristics. COPYRIGHT: (C)2004,JPO
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