| 摘要 |
PROBLEM TO BE SOLVED: To provide a dosimeter capable of measuring even in a high dose region, in order to solve the problem that a conventional dosimeter using Si semiconductor material can not measure a dose in a region of a high dose, for example, several million roentgens (R), with a background information that use thereof in a high dose is impossible because of a problem existing in radiation resistance of a Si substrate and an oxide film interface. SOLUTION: This radiation dosimeter is constituted as follows: p-type regions are formed partially on the upper part of an n-type SiC substrate; an oxide film is laminated on the n-type SiC substrate between the p-type regions; an electrode metal is laminated on the p-type region; a gate electrode is laminated on the oxide film; a voltage is applied to the gate electrode; one side of the electrode metal is earthed; and the other side of the electrode metal is connected to an ammeter. COPYRIGHT: (C)2004,JPO
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