SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor device employing an SOI substrate in which generation of a leak current dependent on the gate voltage is controlled. SOLUTION: A p-type body region 13, a source region (not shown) and a drain layer 15, a p+impurity layer 8 containing p-type impurities of higher concentration than those of the body region 13 and supplying a voltage thereto, and a p-impurity layer 24 provided between the body region 13 and the p+impurity layer 8 and containing p-type impurities of higher concentration than those of the body region 13 but lower than those of the p+impurity layer 8 are provided on an SOI layer 1. A silicide layer 16 is provided on the p+impurity layer 8. Since the concentration of p-type impurities in the p-impurity layer 24 is higher than that in the body region 13, a depletion layer appearing upon application of a gate voltage does not elongate readily toward the p+impurity layer 8. Consequently, crystal defects occurring in the p+impurity layer 8 at the time of forming the silicide layer 16 in the depletion layer are not taken in readily. COPYRIGHT: (C)2004,JPO