| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a silicon carbide semiconductor device that has a terminal structure, comprising a plurality of regions where impurity concentration is different, using simple processes. SOLUTION: A recess, whose depth changes in steps, is formed in an n-type semiconductor layer 2 that is subjected to epitaxial grown on an n-type semiconductor substrate 1, and a p-type semiconductor film is subjected to epitaxial growth, while increasing the impurity concentration in steps, thus forming first to sixth p-type semiconductor regions 11, 21, 31, 22, 32, and 33, where the impurity concentration differs in steps in a depth direction in the recess. As a result, the impurity concentration becomes lower in steps, starting from the termination of the Schottky electrode 3 toward the outside of the device, and the terminal structure, where the deeper the depth becomes the lower the impurity concentration becomes in steps, is formed. COPYRIGHT: (C)2004,JPO |
