TUNNEL MAGNETORESISTIVE ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain a tunnel magnetoresistive element having excellent thermal stability. SOLUTION: A method for manufacturing the tunnel magnetoresistive element comprises a first step of forming a conductive layer of a tunnel insulating layer precursor in a step of forming the tunnel insulating layer of the tunnel magnetoresistive element, and a second step of oxidizing the conductive layer. In this method, in the first step of forming the conductive layer, a film forming velocity is 0.4Å/s or less. COPYRIGHT: (C)2004,JPO