发明名称 INSULATING SUBSTRATE FOR THIN-FILM POLYCRYSTALLINE SILICON SOLAR BATTERY, AND METHOD FOR MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an insulating substrate for a thin-film polycrystalline silicon solar battery, presenting high photoelectric converting efficiency in accordance with texture effects by reducing gas yield even when this insulating substrate is heated at a high temperature at forming of a solar battery cell. <P>SOLUTION: A metal substrate is coated with silicone based, coating obtained by mixing inorganic filling agent such as silica, titanium oxide, and aluminum with silicone based resin constituted of Si-O junction as a main skeleton, and added with an alkyl group, alkenyl group, and phenyl group or the like as a side chain, and primary burning is carried out at 300 to 380°C for 100 to 200 seconds, and secondary burning is carried out in 400 to 500°C for 200 to 300 seconds. Therefore, even if the insulating coating formed by the secondary burning is vacuum-heated at 500°C, gas generation rate can be reduced, and a thin film polycrystalline silicon solar battery cell forming device can be prevented from being contaminated. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003303979(A) 申请公布日期 2003.10.24
申请号 JP20020104911 申请日期 2002.04.08
申请人 NISSHIN STEEL CO LTD 发明人 ANAMI KATSUMASA;KAJIMOTO ATSUSHI;MAKINO TOMONORI
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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