| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the light emission extraction efficiency of a light-emitting element in a gallium nitride-based semiconductor light-emitting element. <P>SOLUTION: This gallium nitride-based light-emitting element 100 is provided with a antireflection layer (or a reflecting layer for reflecting light) whose light-transmitting efficiency is made most satisfactory. Also, attenuation of lights radiated to the light radiation side, due to reflection can be suppressed, by an antireflection layer 10, (or lights radiated to the opposite side of the light-extracting side are radiated in a target direction in the reflecting layer). Thus, the lights of the light-emitting element can be more prevented from radiating in surplus directions, and the waste of output can be further prevented, and the light-emitting efficiency can be more improved than in the conventional manner. <P>COPYRIGHT: (C)2004,JPO |
