发明名称 MICROWAVE LARGE POWER AMPLIFIER CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a microwave large power amplifier circuit capable of hardly changing the RF characteristics of a microwave amplifier circuit due to the influence of an internal electric field, and closely mounting a detection monitor circuit or a temperature monitor circuit. SOLUTION: This microwave large power amplifier circuit is provided with a multi-layer substrate 8 equipped with a lower conductor layer 13d formed with a GND pattern on its whole face, an upper conductor layer 13a arranged with a capacitor 4, and dielectric layers 14a to 14c electrically insulating the lower conductor layer 13d and the upper conductor layer 13a, a cover 9 and case 3 containing the multi-layer substrate 8, and forming two spaces divided by the multi-layer substrate 8, and a metallic post 19 connected to GND at the position of 1/4 wavelength of the multi-substrate 8. Then, a temperature monitor circuit 16, a detection monitor circuit 17, and a temperature monitor sensor 21 mounted so as to be together fastened to the metallic post 19 are mounted on the upper conductor layer 13a. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003304130(A) 申请公布日期 2003.10.24
申请号 JP20020108065 申请日期 2002.04.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 HANSHIYOU HIDESHI
分类号 H03F3/60;(IPC1-7):H03F3/60 主分类号 H03F3/60
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