| 摘要 |
PROBLEM TO BE SOLVED: To provide ion-doping equipment wherein the ratio of ion species to be implanted is stabilized and the high precision control of dosage is enabled in the ion-doping equipment. SOLUTION: This ion-doping equipment is provided with a gas inlet means, an ion-generating means, an extraction accelerating means, and a doping chamber which has an ion source surrounded by a double-structure wall having a gap and has a holding means which is continuously connected with the ion source and holds a substrate to exposed to the flow of the ions. The gap is filled with a medium for heating or cooling. The temperature of the inner wall of the ion source is kept constant by heating the wall to at least a temperature wherein an increase in temperature is caused by self heat generation or by cooling the wall to room temperature, or lower by using an ion-generating means. COPYRIGHT: (C)2004,JPO
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