| 摘要 |
PROBLEM TO BE SOLVED: To provide a control method for a semiconductor memory device and a semiconductor memory device in which a period of pre-charge performed after finish of continuous access operation can be shortened without deteriorating restore-voltage for memory cells and delaying a data access time. SOLUTION: Activated word lines WL0 are non-activated in proper timing during selection of column selection lines CL0,..., CLN after pairs of bit lines (BL0 and /BL0,..., BLN and /BLN) are differential-amplified to a voltage level of full amplitude. That is, a non-activation timeτA can be incorporated in continuous data access operation. Pre-charge operation can be completed by a non-activation timeτB of a sense amplifier and an equalizing timeτC of a pair of bit lines, so that a pre-charge period can be shortened. COPYRIGHT: (C)2004,JPO
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