| 摘要 |
The invention relates to a capacitive structure above a metallisation level of an electronic component. Said structure comprises two electrodes separated by a layer of dielectric material, the first electrode being electrically connected to the metallisation level, characterised in that the first electrode (22) has a slotted structure, covering the form of a number of regions (20) of material with low relative permittivity arranged above the level of metallisation (3), the layer of dielectric material (23) covers the first electrode, the second electrode (28) covers the layer of dielectric material and fills the troughs of the slotted stricture and has a connection pad (33) on the upper face thereof. The invention further relates to a method for production of such a capacitive structure. |
