METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH SHALLOW TRENCH ISOLATION STRUCTURE

摘要

PURPOSE: A method for fabricating a semiconductor device with a shallow trench isolation(STI) structure is provided to prevent a malfunction of the semiconductor device by preventing a stop layer from being left in an STI process. CONSTITUTION: A pad oxide layer is deposited on a silicon substrate(300). A Vtn implant process, a Vtp implant process, an N well implant process and a P well implant process are performed on the silicon substrate having the pad oxide layer. A polysilicon layer for forming a gate is formed on the silicon substrate. An isolation trench is formed in a corresponding position on the silicon substrate according to an STI pattern. An isolating insulation material is buried in the trench to form an isolation layer. The buried isolating insulation material is polished to be even through a chemical mechanical polishing(CMP) process. A gate pattern is formed in a corresponding position on the silicon substrate in an active region in the isolation layer. A gate implant process and a lightly-doped-drain(LDD) implant process are performed.