| 摘要 |
PURPOSE: A method for fabricating a field effect transistor(FET) using a superconductor is provided to improve repeatability by using MgB2 as a superconducting layer, and to reduce fabricating cost by using a cooling apparatus for a high temperature superconductor. CONSTITUTION: A gate metal is formed on a substrate(10). A gate insulation layer is formed on the gate metal. A source/drain electrode(40) is formed on the gate insulation layer. A gate electrode(50) is so formed to contact the gate metal. A superconducting layer in contact with the source/drain electrode is formed.
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