发明名称 |
Thin film transistor formed by an etching process with high anisotropy |
摘要 |
The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.
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申请公布号 |
US2003197180(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20030438725 |
申请日期 |
2003.05.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
TSUJIMURA TAKATOSHI;TAKEICHI MASATOMO;SCHLEUPEN KAI R.;COLGAN EVAN G. |
分类号 |
H01L21/336;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L29/76;H01L31/036;H01L31/112 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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