发明名称 |
Method of forming retrograde n-well and p-well |
摘要 |
A method of forming retrograde n-wells and p-wells. A first mask is formed on the substrate and the n-well implants are carried out. Then the mask is thinned, and a deep p implant is carried out with the thinned n-well mask in place. This prevents Vt shifts in FETs formed in the n-well adjacent the nwell-pwell interface. The thinned mask is then removed, a p-well mask is put in place, and the remainder of the p-well implants are carried out.
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申请公布号 |
US2003197227(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20020063406 |
申请日期 |
2002.04.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BREITWISCH MATTHEW J.;LAM CHUNG H.;SLINKMAN JAMES A. |
分类号 |
H01L21/8238;(IPC1-7):H01L29/76;H01L21/76;H01L31/062 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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