Method of epitaxial lateral overgrowth

摘要

A method of epitaxial lateral overgrowth. First, a silicon substrate is provided. Next, a selective growth mask is formed on the substrate. The selective growth mask is patterned to form a plurality of opening windows between the adjacent patterned selective growth masks so as to expose the surface of the substrate thereon. Finally, a BP epitaxial layer is formed by vertically overgrowing the BP epitaxial layer on the surface of the substrate in the opening windows until the BP epitaxial layer is thicker than the patterned selective growth mask, and laterally overgrowing the BP epitaxial layer on the patterned selective growth mask.