发明名称 Device for producing refresh signal for semiconducting memory device memory cell produces capacitor charging current proportional to difference between temperature dependent and independent currents
摘要 The device has a capacitor, a differential current source for providing a capacitor charging current with temperature dependent and temperature independent current sources connected together so the current level of the capacitor charging current is proportional to the difference between the temperature dependent and temperature independent currents. A comparator outputs a refresh signal if the capacitor voltage exceeds a reference voltage. The device has a capacitor (C), a differential current source (14) for providing a capacitor charging current for charging the capacitor with temperature dependent and temperature independent current sources that are connected together so that the current level of the capacitor charging current is proportional to the difference between the temperature dependent and temperature independent currents. A comparator (12) outputs a refresh signal if the capacitor voltage (VC) exceeds a reference voltage (VREF). AN Independent claim is also included for the following: an arrangement for implementing the inventive method of producing a refresh signal for a memory cell of a semiconducting memory device, preferably a DRAM memory.
申请公布号 DE10214101(A1) 申请公布日期 2003.10.23
申请号 DE20021014101 申请日期 2002.03.28
申请人 INFINEON TECHNOLOGIES AG 发明人 SCHNABEL, JOACHIM;SCHAEFER, ANDRE
分类号 G11C7/04;G11C11/406;H03K3/0231;(IPC1-7):G11C11/406;G11C11/407;H03L7/00;H03K3/023 主分类号 G11C7/04
代理机构 代理人
主权项
地址