发明名称 |
Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor, and radiation-emitting semiconductor chip |
摘要 |
A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III-V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.
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申请公布号 |
US2003197170(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20030377363 |
申请日期 |
2003.02.28 |
申请人 |
BADER STEFAN;FEHRER MICHAEL;HAHN BERTHOLD;HARLE VOLKER;LUGAUER HANS-JURGEN |
发明人 |
BADER STEFAN;FEHRER MICHAEL;HAHN BERTHOLD;HARLE VOLKER;LUGAUER HANS-JURGEN |
分类号 |
H01L33/00;H01S5/343;(IPC1-7):H01L29/06;H01L31/032;H01L21/00 |
主分类号 |
H01L33/00 |
代理机构 |
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地址 |
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