| 摘要 |
<p>In order to obtain epitaxial growth according to state of the art, a plurality of strips often need to be regularly produced on a plane in order to form a repairing area. This leads to an overlapping and incorrect orientation of crystalline structures. According to the inventive method, the strip is wide enough to prevent an overlapping since the width of the contour is adapted to the area which is to be repaired.</p> |
