发明名称 METHOD FOR PRODUCING MATERIAL OF ELECTRONIC DEVICE
摘要 A method for forming a film on the surface of the basic material of an electronic device by using plasma based on microwave irradiation through a planar antenna member having a plurality of slits under existence of a processing gas comprising at least a gas containing a film forming substance and a rare gas. An insulation film capable of forming the basic material of an electronic device having an insulation film of good electric characteristics can thereby be formed.
申请公布号 WO03088342(A1) 申请公布日期 2003.10.23
申请号 WO2003JP04128 申请日期 2003.03.31
申请人 TOKYO ELECTRON LIMITED;SUGAWARA, TAKUYA;TADA, YOSHIHIDE;OHTA, TOMOHIRO 发明人 SUGAWARA, TAKUYA;TADA, YOSHIHIDE;OHTA, TOMOHIRO
分类号 C23C16/511;H01J37/32;H01L21/02;H01L21/316;(IPC1-7):H01L21/316;H01L21/205 主分类号 C23C16/511
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