| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to easily control the thickness of silicide by performing a silicide process while a silicon substrate is not implanted, and to prevent a characteristic of the semiconductor device from being deteriorated by residues by performing the silicide process before a shallow trench isolation(STI) process. CONSTITUTION: A pad oxide layer is deposited on the silicon substrate(200). A Vtn implant process, a Vtp implant process, an N well implant process and a P well implant process are performed on the silicon substrate having the pad oxide layer. A silicide layer(204) is formed on the implanted silicon substrate. An isolation layer(206) is formed to isolate semiconductor devices through an STI process. The silicide layer deposited in a gate electrode formation position in the isolation layer is etched to form a gate poly(210). A gate pattern is formed in a corresponding position on the silicon substrate in an active region. A gate implant process and a source/drain implant process are performed.
|
