| 摘要 |
A cell in a structural phase-change memory is programmed by raising cell voltage and cell current to programming threshold levels, and then lowering these to quiescent levels below their programming levels. A precharge pulse is then applied which raises the bitline voltage of the selected cell and does not raise the cell voltage and cell current to their programming levels. Then, the cell current is raised to a read level which is below the programming threshold level, and the bitline voltage is compared to a reference voltage while the cell current is at the read level.
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