发明名称 |
Negative voltage generator for a semiconductor memory device |
摘要 |
A negative voltage generator is controlled responsive to a word line precharge signal. Voltage fluctuations in a negatively biased word line scheme are reduced by using a kicker circuit to provide a predetermined amount of negative charge to shut off a word line during a precharge operation. The negative voltage generator includes first and second negative charge pumps. The second charge pump is activated responsive to the word line precharge signal. A negative voltage regulator can be used to regulate a negative voltage signal. A level shifter uses two voltage dividers and a differential amplifier to reduce response time, output ripple, and sensitivity to process and temperature variations. A negative voltage regulator cancels ripple from a charge pump to provide a stable negative bias voltage and reduce the amount of charge needed to precharge a word line.
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申请公布号 |
US2003197546(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20030422534 |
申请日期 |
2003.04.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SIM JAE-YOON;YOO JEI-HWAN |
分类号 |
G11C5/14;G11C16/30;H02M3/07;(IPC1-7):H03K3/01 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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