发明名称 Integrated memory has inverter stage between first (read) and second (write) data paths that activates memory in test mode and connects first and second data paths together in activated state
摘要 The integrated memory has a memory cell field (3), a first data path (8-1,9-1) for reading data from the cell field, a second data path (6-1,9-1) for writing data to the cell field and an inverter stage (7-1) between the first and second data paths that activates the memory in test mode and connects the first and second data paths together in the activated state. AN Independent claim is also included for the following: a method of operating an inventive device.
申请公布号 DE10214209(A1) 申请公布日期 2003.10.23
申请号 DE20021014209 申请日期 2002.03.28
申请人 INFINEON TECHNOLOGIES AG 发明人 OHLHOFF, CARSTEN
分类号 G11C29/36;(IPC1-7):G11C29/00 主分类号 G11C29/36
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