发明名称 |
Field emission electron source |
摘要 |
There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.
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申请公布号 |
US2003197457(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20030438070 |
申请日期 |
2003.05.15 |
申请人 |
MATSUSHITA ELECTRIC WORKS, LTD. |
发明人 |
KOMODA TAKUYA;ICHIHARA TSUTOMU;AIZAWA KOICHI;KOSHIDA NOBUYOSHI |
分类号 |
H01L33/00;H01J1/30;H01J1/312;H01J9/02;(IPC1-7):H01J1/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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