| 摘要 |
The invention provides a method of manufacturing a semiconductor device, capable of enhancing characteristics of each semiconductor element constituting the semiconductor device, while reducing or suppressing non-uniformity in the characteristics thereof. When forming a thin-film circuit constructed by arranging a plurality of pixel circuits on a glass substrate, first, a plurality of concave portions to be seeds in crystallizing a semiconductor film are formed on the glass substrate with a pitch n times an array pitch of a plurality of pixel circuits. Then, an amorphous silicon film is formed on the glass substrate on which the concave portions are formed, and by crystallizing the silicon film by heating, a substantially monocrystalline silicon film is formed within a region centered on the concave portions. Using each of the substantially monocrystalline silicon film formed substantially centered around the respective concave portions, pixel circuits are formed. |
