| 摘要 |
<p>A storage device capable of accurately reading out data stored in a resistance varying storage element. The storage device uses a resistance varying storage element whose resistance value varies to a high resistance state in which the resistance value is higher than the reference resistance value and to a low resistance state in which the resistance value is lower than the reference resistance value according to two types of data stored. Between two reference potential terminals set to different potentials, there are arranged a reference circuit and a storage circuit connected in parallel. The reference circuit consists of a resistance element and a reference resistance element connected in series. The storage circuit consists of a resistance element and a resistance varying storage element connected in series. The reference resistance element is arranged so that the resistance value can be modified.</p> |
