发明名称 |
Method for fabricating non-volatile memory having P-type floating gate |
摘要 |
A method for fabricating a non-volatile memory having a P-type floating gate is described. A tunneling layer is formed on a substrate and then a first patterned polysilicon layer is formed on the tunneling layer. A buried drain is formed in the substrate beside the first polysilicon layer and then an insulating structure is formed on the tunneling layer on the buried drain. Thereafter, a second polysilicon layer is formed on the first polysilicon layer to constitute a floating gate together with the first polysilicon layer. A P-type ion is implanted into the second polysilicon layer and then a dielectric layer and a control gate are sequentially formed on the floating gate. A thermal process is then performed to make the P-type, ion in the second polysilicon layer diffuse into the first polysilicon layer.
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申请公布号 |
US2003199143(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20020139119 |
申请日期 |
2002.05.02 |
申请人 |
LIN HUNG-SUI;ZOUS NIAN-KAI;LU TAO-CHENG;CHANG KENT KUOHUA |
发明人 |
LIN HUNG-SUI;ZOUS NIAN-KAI;LU TAO-CHENG;CHANG KENT KUOHUA |
分类号 |
H01L21/8247;H01L27/115;H01L29/423;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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