| 摘要 |
<p>A system and methodology is provided for proper reading of multi-bit memory cells (10) in a memory device. A first reference cell (70) and a second reference cell (72) are employed to determine an average dynamic reference value. The average dynamic reference value is determined by reading a programmed bit of the reference cell (70) and reading an unprogrammed or erased bit of a second reference cell (72) to determine an average dynamic reference value. The average dynamic reference value can be utilized to determine whether data cells are in a programmed state or in an unprogrammed state.</p> |
