Molecular nitrogen implantation dosage estimation method for integrated circuit manufacture, involves building relation between molecular nitrogen implantation dosage and suppression ratio of oxide layer after thermal process

摘要

The semiconductor wafer implanted with molecular nitrogen and a non-implanted wafer, are subjected to thermal process to grow an oxide layer on each wafer. A suppression ratio is computed based on difference between thickness of oxide layers on implanted and non-implanted wafers. An estimated molecular nitrogen implantation dosage is computed, based on relation between suppression ratio and implantation dosage. An Independent claim is also included for ion implanted stability assess method.