| 摘要 |
A method for forming a silicon epitaxial layer on a semiconductor under layer of a substrate (W) to be treated in a treating chamber (2), which comprises a pressure reduction step of evacuating the inside of the treating chamber (2) holding the substrate (W) to be treated, and a vapor phase deposition step of introducing a film forming gas containing a silane gas into the treating chamber (2), to thereby grow a silicon epitaxial layer on a semiconductor under layer through vapor phase deposition, and, between the two steps, a hydrogen chloride treatment step of introducing a first pre-treatment gas containing hydrogen chloride into the treating chamber (2), to treat the atmosphere in the treating chamber (2) with the first pre-treatment gas, and a hot hydrogen treatment step of introducing a second pre-treatment gas containing a hydrogen gas into the treating chamber (2) with heating, to treat the surface of the semiconductor under layer with the second pre-treatment gas heated.
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