| 摘要 |
A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1x10<17 >to 3x10<18 >dopant atoms per cm<3 >for the anode emitter, especially on its surface 10<19 >dopant atoms per cm<3>or more for the cathode emitter and approximately 10<16 >dopant atoms per cm<3 >for the blocking function of an anode-side zone.
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