| 摘要 |
PURPOSE: A thin film transistor array substrate, a method for fabricating the array substrate, and a mask applied for the fabricating method are provided to simplify a substrate structure and a fabrication process by employing 3-mask process so as to reduce manufacturing cost and improve production yield. CONSTITUTION: A thin film transistor array substrate is composed of a gate pattern, a source/drain pattern, a gate insulating pattern, a semiconductor pattern, and a transparent electrode pattern. The gate pattern includes a gate electrode(54) of a thin film transistor, a gate line(52) connected with the gate electrode and a gate pad(56) connected with the gate line. The source/drain pattern includes source and drain electrodes(60,62) of the thin film transistor, a data line(58) connected to the source electrode and a data pad(64) connected to the data line. The gate insulating pattern insulates the gate pattern and source/drain pattern in a region other than a pixel region. The semiconductor pattern is formed on the gate insulating pattern and selectively removed at the thin film transistor region and gate line region. The transparent electrode pattern is formed at the pixel region and includes a pixel electrode(72) connected with the drain electrode, a gate pad protection electrode(74) formed on the gate pad and a data pad protection electrode(76) formed on the data pad. |
