发明名称 |
Overvoltage protection circuit for integrated CMOS circuit has potential divider unit, signal generator unit, switch unit mounted on same semiconducting substrate as integrated circuit to be protected |
摘要 |
The circuit has external and internal supply voltage connections (11,13), an external earth connection (12), a potential divider unit (2) with a Zener diode (23) and first resistance element (21) series circuit, a signal generator unit (3), an inverter circuit (31,32) and a switch unit (4). The potential divider unit, signal generator unit and switch unit are mounted on the same semiconducting substrate as the protected integrated circuit (5).
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申请公布号 |
DE10315176(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
DE2003115176 |
申请日期 |
2003.04.03 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
NISHIKAWA, MUTSUO;UEYANAGI, KATSUMICHI;UEMATSU, KATSUYUKI;KITAMURA, AKIO |
分类号 |
H01L27/04;G05F1/10;H01L21/822;H01L21/8238;H01L23/62;H01L27/02;H01L27/06;H01L27/092;H02H3/20;H02H9/00;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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