发明名称 Overvoltage protection circuit for integrated CMOS circuit has potential divider unit, signal generator unit, switch unit mounted on same semiconducting substrate as integrated circuit to be protected
摘要 The circuit has external and internal supply voltage connections (11,13), an external earth connection (12), a potential divider unit (2) with a Zener diode (23) and first resistance element (21) series circuit, a signal generator unit (3), an inverter circuit (31,32) and a switch unit (4). The potential divider unit, signal generator unit and switch unit are mounted on the same semiconducting substrate as the protected integrated circuit (5).
申请公布号 DE10315176(A1) 申请公布日期 2003.10.23
申请号 DE2003115176 申请日期 2003.04.03
申请人 FUJI ELECTRIC CO., LTD. 发明人 NISHIKAWA, MUTSUO;UEYANAGI, KATSUMICHI;UEMATSU, KATSUYUKI;KITAMURA, AKIO
分类号 H01L27/04;G05F1/10;H01L21/822;H01L21/8238;H01L23/62;H01L27/02;H01L27/06;H01L27/092;H02H3/20;H02H9/00;(IPC1-7):H01L23/62 主分类号 H01L27/04
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