SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR THIN-FILMS OF DIFFERENT CRYSTALLINITIES, SUBSTRATE THEREOF, PROCESS FOR PRODUCING THESE, LIQUID CRYSTAL DISPLAY UNIT AND PROCESS FOR PRODUCING THE SAME

摘要

A process for producing a substrate of thin-film semiconductor device, comprising a step of forming a non-single-crystal semiconductor thin-film on a base layer and an annealing step of irradiating the non-single-crystal semiconductor thin-film with energy rays so that the crystallinity of the non-single-crystal semiconductor constituting the non-single-crystal semiconductor thin-film is increased. In the annealing step, a multiplicity of unit regions each having at least one irradiation region irradiated with energy rays and at least one non-irradiation region not irradiated with energy rays are formed by simultaneously irradiating the non-single-crystal semiconductor thin-film with a plurality of energy rays.