| 摘要 |
A simulation method is provided in which by using a device model of a thin film transistor in which a nonlinear resistance element or a transistor having characteristics different from an intrinsic transistor is connected to the intrinsic transistor without characteristic deterioration due to a hot carrier, and a circuit operation after hot carrier deterioration can be simulated even by a general-purpose circuit simulator. The nonlinear resistance element is connected to a drain electrode of the intrinsic transistor (conventional device model) without hot carrier deterioration, and an increase of nonlinear resistance due to hot carrier injection is simulated by the nonlinear resistance element. As the nonlinear resistance element, a transistor in which a drain and a gate are connected is used. An increase of channel resistance due to hot carrier deterioration is set by setting the channel length, channel width, and threshold value of the transistor to predetermined values.
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