METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to protect the metal interconnection from external moisture and a chemical component by forming a passivation wall on the side surface of the metal interconnection. CONSTITUTION: An adhesion layer and a diffusion barrier layer(3) are formed as an etch stop layer on the entire surface of a lower insulation layer(1) having a metal interconnection contact hole. A metal layer(4) for the metal interconnection is formed on the resultant structure. A photoresist layer pattern(5) for protecting a portion reserved for the metal interconnection is formed on the metal layer for the metal interconnection. The metal layer for the metal interconnection is etched to form the metal interconnection by using the photoresist layer pattern as an etch mask. After a passivation layer is deposited on the resultant structure, the passivation layer is etched to form the passivation wall on the side surface of the metal interconnection.