发明名称 Protection circuit section for semiconductor circuit system
摘要 <p>A semiconductor circuit system has first, second, and third external terminals (11, 15, 14) electrically separated from each other. The first external terminal is configured to receive a first power supply voltage in a normal operation. A protection circuit section is provided in the circuit system and includes a rectifier (SCR) to allow a surge current to pass therethrough. The rectifier has a current passage connected between a specific terminal connected to a protection target and the third external terminal. The protection circuit section further includes a first PMOS transistor (QP) configured to trigger the rectifier, based on a surge voltage inputted into the second external terminal. The first PMOS transistor has a current passage connected between the second external terminal and a base of the NPN transistor. The first PMOS transistor has a gate connected to the first external terminal.</p>
申请公布号 EP1355355(A2) 申请公布日期 2003.10.22
申请号 EP20030008759 申请日期 2003.04.17
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KITAGAWA, NOBUTAKA
分类号 H01L27/02;H01L29/74;H01L21/822;H01L21/8238;H01L27/04;H01L27/06;H01L27/08;H01L27/092;(IPC1-7):H01L27/02 主分类号 H01L27/02
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