发明名称 LIQUIDDPHASE EPTAXIAL GROWTH UNIT
摘要 <p>PURPOSE:To obtain an excellent epitaxial layer of a substrate crystal, by closely providing mesh-shaped grooves where a substrate crystal holder comes in contact with a solution. CONSTITUTION:On the top and reverse surfaces of holder 6, grooves 11 are made regularly into a mesh shape at an interval of 1 to 2mm to a depth and width of 0.1 to 0.5mm. By fulfilling liquid-phase epitaxial growth with a substrate crystal held by this holder, a crystal is deposited on even the holder centering grooves and not deposited on the substrate part convergingly. As a result, the epitaxial layer surface becomes uniform, flashes deposited at the circumference of the substrate lessens remarkably, and a crystal deposited on top and reverse surface except the substrate holding part is removed easily because of grooves. With an interval of 2mm or more between grooves, effective results can not be obtained. The holder may use carbon, quartz, etc.</p>
申请公布号 JPS54105467(A) 申请公布日期 1979.08.18
申请号 JP19780012006 申请日期 1978.02.07
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 SEKIWA TETSUO
分类号 C30B19/06;H01L21/208;H01L33/30 主分类号 C30B19/06
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