发明名称 |
Method of forming an electric charge in a body of a semiconductor component |
摘要 |
<p>The device has a semiconductor layer provided on an insulating layer and including source and drain (18,20) regions to define a body (22) region of respective field effect transistors. An energy band modifying unit modifies the valence and conduction band of the body region to increase the amount of electrical charge that can be temporarily stored in the region. An Independent claim is also included for a method of controlling a semiconductor device.</p> |
申请公布号 |
EP1355361(A1) |
申请公布日期 |
2003.10.22 |
申请号 |
EP20020405316 |
申请日期 |
2002.04.18 |
申请人 |
INNOVATIVE SILICON SA;ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) |
发明人 |
FAZAN, PIERRE;OKHONIN, SERGUEI |
分类号 |
H01L27/108;H01L29/739;H01L29/78;H01L29/786;H01L29/788;(IPC1-7):H01L29/739;H01L29/88 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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