| 摘要 |
PURPOSE: A method for fabricating a thin film transistor is provided to form an impurity region including an LDD region through one-time ion implantation process. CONSTITUTION: A semiconductor layer is formed on a substrate(41). A gate insulating layer(44) is formed on the overall surface of the substrate including the semiconductor layer. A metal used for forming a gate electrode is deposited on the gate insulating layer. A photoresist pattern is formed on the metal layer, and the metal layer is patterned using the photoresist pattern as a mask. The metal layer is pattern again in such a manner that the lower part of the metal layer is wider than the upper part of the metal layer, to form a gate electrode(45c). An impurity region(43a) is formed in the semiconductor layer through ion implantation using the gate electrode as a mask. |
