METHOD FOR PREVENTING SHORT CHANNEL BY USING TRENCH FORMATION

摘要

PURPOSE: A method for preventing short channel by using trench formation is provided to be capable of preventing reverse short channel phenomenon by transforming the trench filled with thermal oxide into a cavity. CONSTITUTION: A trench pattern is formed at a gate region while forming an STI(Shallow Trench Isolation) pattern. An isolation region(30) is formed by sequentially carrying out an oxide depositing process and a planarization process. Then, the trench pattern is filled with thermal oxide. A cleaning process is carried out at the resultant structure for removing oxide residuals existing at the surface of a silicon substrate. After depositing a selective epitaxial silicon film(50) on the resultant structure, the trench pattern filled with thermal oxide is transformed into a cavity(70) by carrying out a high temperature heat treatment at the deposited film.