| 摘要 |
PURPOSE: A plasma etcher is provided to generate stable plasma under the atmospheric pressure and improve organic matter removing speed by applying double chamber structure to the plasma etcher. CONSTITUTION: The plasma etcher comprises a chamber(10); an open chamber(40) which is formed in the chamber(10), on the upper part of which gas injection port(20) is formed, in which hole(30) is formed at a position oppositely directed to the gas injection port, and which is maintained under the atmospheric pressure state; first and second electrodes(50,60) oppositely directed to each other inside the open chamber so that plasma(130) is generated perpendicularly to gas injected into the gas injection port; a dielectric film(80) which is formed on the surface of the first electrode, and on which a plurality of holes(70) are formed; and a power supply part(90) for supplying a power supply to the first electrode, wherein the plasma etcher further comprises third electrode(100) at which a sample(150) is positioned; and a moving means(110) for controlling a distance between the third electrode and the chamber by moving the third electrode vertically.
|
