Gate voltage limiting for a circuit arrangement

摘要

The circuit has power semiconducting components in the form of switching transistors, pref. IGBTs, and a gate controller suitable for parallel connection. The controller has separate gate resistances (Ron,Roff) for switching on and off and separate auxiliary emitter resistances (RE) for each power switch to achieve a short circuit protected operating mode. The driver circuit earth connection is connected to the summing point of the auxiliary emitter resistances. A diode is connected in series with the gate resistance with its cathode towards the gate resistance. A clamping diode such as a Schottky diode is connected in parallel with each emitter resistance with its cathode towards the emitter. A drain diode is connected to each gate with its cathode towards the gate supply voltage.