| 摘要 |
PURPOSE: An internal inductively coupled plasma assisted chemical vapor deposition system is provided to increase deposition ratio, enable deposition at low temperature and simplify maintenance and repairing of the chamber by installed RF coil for generating inductively coupled plasma in chamber of chemical vapor deposition system. CONSTITUTION: The internal inductively coupled plasma assisted chemical vapor deposition system comprises a chamber(30) to which evacuation means for adjusting the internal pressure of the chamber is connected, and which provides a reaction space; at least one or more reaction source injectors installed at one side of the inner part of the chamber to supply reaction source in a uniformed distribution; at least one or more reaction gas injectors(32,33) installed at the other side of the chamber to supply reaction gas; an RFI (radio frequency interference) coil(34) installed under the reaction source injectors and reaction gas injectors to change reaction source and reaction gas supplied through the reaction source injectors and reaction gas injectors into the plasma state by forming an electromagnetic field; and a deposition member on which a substrate(35) is installed so that the substrate is heated, wherein plasma produced by the RFI coil is deposited on the substrate, wherein the internal inductively coupled plasma assisted chemical vapor deposition system further comprises a gas line on which a heating means(31) is mounted to prevent condensation by vaporization of the reaction source and reaction gas supplied from the reaction source injectors and reaction gas injectors, and wherein the RFI coil is formed of a metallic pipe having superior electrical conductivity and thermal conductivity.
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