| 摘要 |
PURPOSE: A method for crystallizing silicon is provided to decrease the number of shots of laser beams and the number of transfer times of a laser beam mask by growing lengthier grains regarding a laser beam of a pulse. CONSTITUTION: Amorphous silicon is deposited on a substrate(100) to form an amorphous antecedent layer. A mask is positioned which includes an interception region formed on the amorphous antecedent layer and a transmission region having a different spatial distribution of laser beam energy density. The first laser beam is irradiated to the mask to melt and crystallize the amorphous silicon layer corresponding to the transmission region. The mask is transferred from a place over the partially crystallized amorphous silicon layer. The second laser beam is irradiated to the mask to melt and crystallize the amorphous silicon layer in a portion corresponding to the transmission region and a partially crystallized region.
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