| 摘要 |
A semiconductor switching circuit device includes a field effect transistor having a source (13), a gate electrode (17) and a drain electrode (15), a first electrode pad connected to the source electrode (13) or the drain electrode (15), and a second electrode pad connected to the source electrode (13) or the drain electrode (15) which is not connected to the first electrode pad (IN). The device also includes a third electrode pad receiving a DC voltage and applying the DC voltage to the field effect transistor, a first insulating layer (60) covering the field effect transistor, a metal layer (70) disposed above the first insulating layer (60) and connected to the third electrode pad, and a second insulating layer (80) disposed on the metal layer (70). The third electrode pad may be a control terminal pad, a ground terminal pad or a terminal pad receiving a constant DC power voltage. The metal layer (70) may be a flat sheet, a lattice or a comb-like structure. |
