发明名称 SLURRY FOR CHEMICAL MECHANICAL POLISHING
摘要 In chemical mechanical polishing of a copper metal film, contamination of a polishing pad may be prevented by using a slurry for chemical mechanical polishing consisting of theta-alumina which mainly comprises secondary particles made of aggregated primary particles as polishing grains.
申请公布号 KR100402443(B1) 申请公布日期 2003.10.22
申请号 KR20000082632 申请日期 2000.12.27
申请人 发明人
分类号 B24B37/00;C09G1/02;C09K3/14;C23F3/04;C23F3/06;H01L21/304;H01L21/321 主分类号 B24B37/00
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