| 摘要 |
PROBLEM TO BE SOLVED: To uniformize the distribution of the temperature in a reaction tube of a vapor phase epitaxial growth system, and to thereby uniformize the film thickness and emission wavelengths of a grown epitaxial wafer for LED. SOLUTION: In the vapor phase epitaxial growth system having such a structure that a heater 3 is provided so as to surround the periphery of an interval A to be kept as a thermally uniform area in the longitudinal area of the reaction tube 4, a growing tool 5 is inserted into the reaction tube 4 so that the growing tool 5 situates in the thermally uniform area, and seal ports 6 are provided at both ends of the reaction tube 4, heat-shielding plates 2 made of SiO<SB>2</SB>are inserted into the both sides of the reaction tube 4 so as to uniformize the distribution of the temperature in the reaction tube 4. COPYRIGHT: (C)2004,JPO
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