Semiconductor device having a reduced leakage current

摘要

A semiconductor device including a plurality of logic circuits (G1 to G4) and an insulated gate field effect transistor (IGFET) (N2). The IGFET (N2) may have a current path connected between each of the logic circuits (G1 to G4) and a first reference supply node (VSS). Each logic circuit (G1 to G4) may have a logic output node (Q) that may be at a potential different than the first reference supply when IGFET (N2) is turned off. The IGFET (N2) may have a counter measure to reduce leakage caused by short channel effects when the IGFET is turned off. In this way, leakage current may be reduced.